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FDP51N25

Manufacturer:

On Semiconductor

Mfr.Part #:

FDP51N25

Datasheet:
Description:

MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 320 W 250 V Continuous Drain Current (ID):51 A 70 nC

ParameterValue
Length10.67 mm
Width4.83 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance60 MΩ
Height9.4 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation320 W
Power Dissipation320 W
Threshold Voltage5 V
Number of Channels1
Input capacitance3.41 nF
Continuous Drain Current (ID)51 A
Rds On Max60 mΩ
Drain to Source Voltage (Vdss)250 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time62 ns
Turn-Off Delay Time98 ns
Element ConfigurationSingle
Fall Time130 ns
Rise Time465 ns
Gate Charge70 nC
Drain to Source Resistance60 mΩ
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)250 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage3 V

Stock: 4

Distributors
pcbx
Unit Price$2.09453
Ext.Price$2.09453
QtyUnit PriceExt.Price
1$2.09453$2.09453
10$1.84464$18.44640
25$1.56705$39.17625
50$1.33124$66.56200
100$1.13092$113.09200
300$1.09359$328.07700
500$1.05749$528.74500
1000$1.02684$1026.84000